GT60N321

toshiba

GT60N321 Specifications:

SpecificationsParameters
Package3TO-3P(LH)
ConfigurationSingle
Maximum Collector Emitter Voltage1000 V
Maximum Continuous Collector Current60 A
Maximum Gate Emitter Voltage±25 V
MountingThrough Hole
Standard PackageRail / Tube

GT60N321 Description:

  • Trans IGBT Chip N-CH 1KV 60A 3-Pin TO-3P(LH)

    GT60N321 datasheet:

GT60N321 similar parts:

Part No.ManufacturerDescription
GT60N321(Q)toshibaTrans IGBT Chip N-CH 1KV 60A 3-Pin TO-3P(LH)
GT60N322(Q)ToshibaIGBT Transistors IGBT 1000V 57A
GT60J321toshibaTrans IGBT Chip N-CH 600V 60A 3-Pin TO-3P(LH)
GT60J322toshibaTrans IGBT Chip N-CH 600V 60A 3-Pin TO-3P(LH)
GT60M104ToshibaTrans IGBT Chip N-CH 900V 60A 3-Pin(3+Tab) TO-3PL
GT60M301ToshibaTrans IGBT Chip N-CH 900V 60A 3-Pin(3+Tab) TO-3PL
GT60M303toshibaTrans IGBT Chip N-CH 900V 60A 3-Pin TO-3P(LH)
GT60M303(Q)toshibaTrans IGBT Chip N-CH 900V 60A 3-Pin TO-3P(LH)
GT60M303QtoshibaTrans IGBT Chip N-CH 900V 60A 3-Pin TO-3P(LH)